2SB762

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD857 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB762 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -4V ICEO Collector Cutoff Current VCE= -30V; IB= 0 ICES Collector Cutoff Current VCE= -60V; VBE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -4V hFE-2 DC Current Gain IC= -3A; VCE= -4V  hFE-1 Classifications R Q P 40-90 70-150 120-250 2SB762 MIN TYP. MAX UNIT -60 V -1.5 V -2.0 V -700 μA -400 μA -7 mA 40 250 15 NOTICE： ISC reserve...