2SB765

isc Silicon PNP Darlington Power Transistor 2SB765 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -1.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1.5A ·Complement to Type 2SD864 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -6 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA , IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A, IB= -3mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A, IB= -30mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -1.5A, IB= -3mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= -3A, IB= -30mA ICBO Collector Cutoff Current VCB= -120V, IE= 0 ICEO Collector Cutoff Current VCE=...