2SB775

isc Silicon PNP Power Transistor 2SB775 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -85V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD895 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 35W audio frequency output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -85 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 60 W 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB775 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(on) Base -Emitter On Voltage IC= -1A; VCE= -5V ICBO Collector Cutoff Current VCB= -40V; IE=0 IEBO Emitter Cutoff Current VEB= -4V; IC=0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -3A; VCE= -5V MIN TYP. MAX UNIT -85 V -100 V -6 V -2.0 V -1...