2SB791

isc Silicon PNP Darlington Power Transistor 2SB791 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= -4A ·Low Saturation Voltage ·Complement to Type 2SD970 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA; IC= 0 VCE(sat)-1★ Collector-Emitter Saturation Voltage IC= -4A; IB= -8mA VCE(sat)-2★ Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA VBE(sat)-1★ Base-Emitter Saturation Voltage IC= -4A; IB= -8mA VBE(sat)-2★ Base-Emitter Saturation Voltage IC= -8A; IB= -80mA ICBO Collector Cutoff Current VCB= -120V; IE= 0 ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ hFE★ DC Current Gain IC= -...