2SB827

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1063 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Universal high current switching as solenoid driving, high speed inverter and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -14 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB827 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A ICBO Collector Cutoff Current VCB= -40V ; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -5A; VCE= -2V  hFE-1 Classifications Q R S 70-140 100-200 140-280 2SB827 MIN TYP. MAX UNIT -50 ...