isc Silicon PNP Power Transistor
2SB860
DESCRIPTION ·Collector Current: IC= -4A ·Low Collector Saturation Voltage
: VCE(sat)= -1.0V(Max)@IC= -1A ·High Collector Power Dissipation ·Complement to Type 2SD1137 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
.