isc Silicon PNP Darlington Power Transistor
2SB887
DESCRIPTION ·High DC Current Gain-
: hFE = 1500(Min)@ IC= -5A ·Wide...
isc Silicon
PNP Darlington Power
Transistor
2SB887
DESCRIPTION ·High DC Current Gain-
: hFE = 1500(Min)@ IC= -5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -5A ·Complement to Type 2SD1197 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage
regulators applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
-15
A
70
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA, IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A, IB= -10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A, IB= -10mA
ICBO
Collector Cutoff Current
VCB= -80V, IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -5A; VCE= -3V
fT
Current-Gain—Bandwidth Product
IC= -5A; VCE= -5V
2SB887
MIN...