2SB986

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current-IC= -4.0A ·Low Saturation Voltage - : VCE(sat)= -0.5V(Max)@ IC= -2A, IB= -0.1A ·Good Linearity of hFE ·Complement to Type 2SD1348 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power supplies, relay drivers, lamp drivers, electrical equipment applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 1.2 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB986 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= -10μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2.0A; IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -2.0A; IB= -0.1A ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -0.1A ; VCE= -2V hFE-2 DC Current Gai...