2SB1009

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -32V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1380 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -3 A 10 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1009 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -20V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -0.5A; VCE= -5V  hFE Classifications P Q R 82-180 120-270 180-390 2SB1009 MIN TYP. MAX UNIT -32 V -40 V -5 V -0....