2SB1016

isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0 V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1407 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -4A; VCE= -5V  hFE-1 Classifications R O Y 40-80 70-140 120-240 2SB1016 MIN TYP. MAX UNIT -100 V -2.0 V -1.5 V -100 μA -1.0 mA 40 240 20 NOTICE： ISC reserves the rights to make changes of the content herein the dat...