PNP Transistor. 2SB1017 Datasheet

2SB1017 Transistor. Datasheet pdf. Equivalent

Part 2SB1017
Description PNP Transistor
Feature isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.7V(M.
Manufacture INCHANGE
Datasheet
Download 2SB1017 Datasheet

SavantIC Semiconductor www.DataSheet4U.com Product Specific 2SB1017 Datasheet
UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPI 2SB1017 Datasheet
: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1017 POWER AMPLIFIER 2SB1017 Datasheet
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector 2SB1017 Datasheet
Recommendation Recommendation Datasheet 2SB1017 Datasheet





2SB1017
isc Silicon PNP Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -1.7V(Max)@IC= -3A
·Good Linearity of hFE
·Complement to Type 2SD1408
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications.
·Recommended for 20~25W high-fidelity audio frequency
amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-0.4
A
2
W
25
150
Tstg
Storage Temperature Range
-55~150
2SB1017
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark



2SB1017
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
hFE-1 Classifications
R
O
Y
40-80 70-140 120-240
2SB1017
MIN TYP. MAX UNIT
-80
V
-1.7 V
-1.5 V
-30 μA
-0.1 mA
40
240
15
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)