isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@IC= -4A ·High Cu...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current switching applications. ·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IB
Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1
A
2 W
30
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SB1018
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= -4A; IB= -0.4A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -1V
hFE-2
DC Current Gain
IC= -4A; VCE= -1V
hFE-1 Classifications
O
Y
70-140 120-240
2SB1018
MIN TYP. MAX UNIT
-80
V
-0.5 V
-1.4 V
-5 μA
-5 μA
70
240
30
NOTICE: ISC reserves the righ...