2SB1023

isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·High DC C urrent Gain- : hFE= 2000(Min.)@IC= -1A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -2A ·Good Linearity of hFE ·Complement to Type 2SD1413 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications. ·Hammer drive, pulse motor drive applications. ·Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -60 V -40 V -5 V -3 A -6 A -0.3 A 2 W 20 150 ℃ -55~150 ℃ 2SB1023 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -4mA ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -3A; VCE= -2V 2SB1023 MIN TYP. MAX U...