2SB1024

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -3A ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD1414 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.3 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1024 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -6mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -2V hFE-2 DC Current Gain IC= -3A; VCE= -2V 2SB1024 MIN TYP. MAX UNIT -80 V -1.5 V -2.0 V -20 μA -2.5 mA 2000 1000 NOTICE： ISC reser...