isc Silicon PNP Power Transistor
2SB1054
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@IC= -3A...
isc Silicon
PNP Power
Transistor
2SB1054
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@IC= -3A ·Wide Area of Safe Operation ·Complement to Type 2SD1485 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-8
A
3 W
60
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -3A; VCE= -5V
COB
Output Capacitance
IE= 0; VCE= -10V; ftest=1MHz
fT
Current-Gain—Bandwidth Product
IC=-0.5A; VCE= -5V;ftest=1MHz
hFE-2 Classifications
Q
P
60-120 100-200
2SB1054
MIN TYP. MAX UNIT
-2.0 V
-1.8 V
-5...