DatasheetsPDF.com

2SB1064 Dataheets PDF



Part Number 2SB1064
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet 2SB1064 Datasheet2SB1064 Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·Wide Area of Safe Operation ·Complement to Type 2SD1505 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V.

  2SB1064   2SB1064



Document
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -2A ·Wide Area of Safe Operation ·Complement to Type 2SD1505 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -4.5 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1064 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1064 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -0.5A; VCE= -3V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V COB Output Capacitance IE=0; VCB= -10V; f= 1MHz MIN TYP. MAX UNIT -50 V -60 V -5 V -1.0 V -1.5 V -1.0 μA -1.0 μA 60 320 70 MHz 50 pF  hFE Classifications D E F 60-120 100-200 160-320 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


2SB1063 2SB1064 2SB1065


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)