isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -2A ·High Spe...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -2A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-40
V
VCEO Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICM
Collector Current-Peak
Total Power Dissipation @ Ta=25℃
PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-8
A
1.4 W
25
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SB1069
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.1A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.1A; VCE= -2V
hFE-2
DC Current Gain
IC= -1A; VCE= -2V
hFE-2 Classifications
R
Q
P
60-120 90-180 130-260
2SB1069
MIN TYP. MAX UNIT
-20
V
-0.5
V
-1.5
V
-50 μA
-50 μA
45
60
260
NOTICE: ISC reserves the rights to make changes of the content herein the datashee...