PNP Transistor. 2SB1085 Datasheet

2SB1085 Transistor. Datasheet pdf. Equivalent

Part 2SB1085
Description PNP Transistor
Feature isc Silicon PNP Power Transistor 2SB1085 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR).
Manufacture INCHANGE
Datasheet
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2SB1085A Datasheet
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2SB1085
isc Silicon PNP Power Transistor
2SB1085
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V (Min)
·Wide Area of Safe Operation
·Complement to Type 2SD1562
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
Total Power Dissipation
@ TC=25
PC
Total Power Dissipation
@ Ta=25
TJ
Junction Temperature
-3
A
20
W
1.5
150
Tstg
Storage Temperature Range
-55~150
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2SB1085
isc Silicon PNP Power Transistor
2SB1085
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.1A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.1A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.1A; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
MIN TYP. MAX UNIT
-120
V
-120
V
-5
V
-2.0
V
-1.5
V
-1.0 μA
-1.0 μA
60
200
50
MHz
30
pF
hFE Classifications
D
E
60-120 100-200
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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