isc Silicon PNP Power Transistor
2SB1097
DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Volta...
isc Silicon
PNP Power
Transistor
2SB1097
DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage
: VCE(sat)= -0.5V(Max)@IC= -5A ·Complement to Type 2SD1588 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-frequency power amplifiers and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Pulse
-15
A
IB
Base Current-Continuous
Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3.5
A
2 W
30
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.com
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -3A; VCE= -1V
hFE-2
DC Current Gain
IC= -5A; VCE= -1V
hFE-1 Classifications
M
L
K
40-80 60-120 100-200
2SB1097
MIN TYP. MAX UNIT
-0.5
V
-1.5
V
-10 μA
-10 μA
40
200
20
NOTICE: ISC reserves the rights to make changes...