2SB1101

isc Silicon PNP Darlington Power Transistor 2SB1101 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1601 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -2A; IB= -4mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= -4A; IB= -40mA ICBO Collector Cutoff Current VCB= -60V; IE= 0 ICEO Collector Cutoff Current VCE= -50V; RBE= ∞ hFE DC Current Gain IC= -2A; VCE= -3V 2SB1101 MIN TY...