isc Silicon PNP Power Transistor
2SB1160
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) ·Goo...
isc Silicon
PNP Power
Transistor
2SB1160
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1715 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-9
A
ICP
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-15
A
100 W
3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
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isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A
VBE(on) Base -Emitter On Voltage
IC= -7A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -7A; VCE= -5V
hFE-2Classifications
Q
S
P
60-120 80-160 100-200
2SB1160
MIN TYP. MAX UNIT
-2.0 V
-1.8 V
-50 μA
-50 μA
20
60
200
20
NOTICE: ISC reserves the rights to make changes of t...