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2SB1185

PNP Transistor

Description

isc Silicon PNP Power Transistor 2SB1185 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -2A ·Complement to Type 2SD1762 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applicatio...

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