PNP Transistor. 2SB1185 Datasheet

2SB1185 Transistor. Datasheet pdf. Equivalent

Part 2SB1185
Description PNP Transistor
Feature isc Silicon PNP Power Transistor 2SB1185 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR).
Manufacture INCHANGE
Datasheet
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Transistors Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 2SB1185 Datasheet
SavantIC Semiconductor www.DataSheet4U.com Product Specific 2SB1185 Datasheet
Power Transistor FEATURES  Low VCE(sat). VCE(sat)=-0.5V(TYP 2SB1185 Datasheet
2SB1185 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F 2SB1185 Datasheet
isc Silicon PNP Power Transistor 2SB1185 DESCRIPTION ·Coll 2SB1185 Datasheet
Recommendation Recommendation Datasheet 2SB1185 Datasheet





2SB1185
isc Silicon PNP Power Transistor
2SB1185
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min.)
·Good Linearity of hFE
·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.)@ IC= -2A
·Complement to Type 2SD1762
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-4.5
A
2
W
25
150
Tstg
Storage Temperature Range
-55~150
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2SB1185
isc Silicon PNP Power Transistor
2SB1185
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.5A; VCE= -3V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest=1MHz
fT
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -5V; ftest= 30MHz
MIN TYP. MAX UNIT
-50
V
-60
V
-5
V
-1.0 V
-1.5 V
-1 μA
-1 μA
60
320
50
pF
70
MHz
hFE Classifications
D
E
F
60-120 100-200 160-320
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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