PNP Transistor. 2SB1190 Datasheet

2SB1190 Transistor. Datasheet pdf. Equivalent

Part 2SB1190
Description PNP Transistor
Feature isc Silicon PNP Power Transistor DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakd.
Manufacture INCHANGE
Datasheet
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isc Silicon PNP Power Transistor DESCRIPTION ·High Power Di 2SB1190 Datasheet
Recommendation Recommendation Datasheet 2SB1190 Datasheet





2SB1190
isc Silicon PNP Power Transistor
DESCRIPTION
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
·Complement to Type 2SD1770
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications.
·TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-1
A
ICM
Collector Current-Peak
Total Power Dissipation
@ TC=25
PC
Total Power Dissipation
@ Ta=25
TJ
Junction Temperature
-2
A
25
W
1.4
150
Tstg
Storage Temperature Range
-55~150
2SB1190
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2SB1190
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -0.5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -0.3A; VCE= -10V
ICBO
Collector Cutoff Current
VCB= -200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -0.1A; VCE= -10V
hFE-2
DC Current Gain
IC= -0.3A; VCE= -10V
hFE-1 Classifications
Q
P
60-140 100-240
2SB1190
MIN TYP. MAX UNIT
-150
V
-6
V
-1.0
V
-1.0
V
-50 μA
-50 μA
60
240
50
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





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