2SB1194

isc Silicon PNP Darlington Power Transistor 2SB1194 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -3A) ·Complement to Type 2SD1633 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.5 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -3mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -3mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 ICEO Collector Cutoff Current VCE= -100V; IB= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE DC Current Gain IC= -3A; VCE= -3V  hFE Classifications Q P 1500-6000 4000-10000 2SB1194 MIN TYP. MAX UNIT -100 V -1.5 V -...