2SB1228

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -4A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SD1830 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -12 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1228 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -8mA VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -8mA ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -4A; VCE= -3V fT Current-Gain—Bandwidth Product IC= -4A; VCE= -5V 2SB1228 MIN TYP. MAX UNIT -100 ...