2SB1230

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1840 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, converters and other general High-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A ICP Collector Current-Pulse -25 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 3 W 100 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1230 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1230 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A VBE(sat) Base -Emitter Saturation Voltage IC= -6A; IB= -0.6A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1....