PNP Transistor. 2SB1255 Datasheet

2SB1255 Transistor. Datasheet pdf. Equivalent

Part 2SB1255
Description PNP Transistor
Feature isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC=.
Manufacture INCHANGE
Datasheet
Download 2SB1255 Datasheet

Power Transistors 2SB1255 Silicon PNP epitaxial planar type 2SB1255 Datasheet
SavantIC Semiconductor www.DataSheet4U.com Product Specific 2SB1255 Datasheet
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Hi 2SB1255 Datasheet
Recommendation Recommendation Datasheet 2SB1255 Datasheet





2SB1255
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·High DC Current Gain-
: hFE= 5000(Min)@IC= -6A
·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -7A
·Complement to Type 2SD1895
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-140
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ
Junction Temperature
-12
A
100
W
3
150
Tstg
Storage Temperature Range
-55~150
2SB1255
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark



2SB1255
isc Silicon PNP Darlington Power Transistor
2SB1255
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -7A; IB= -7mA
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
ICEO
Collector Cutoff Current
VCE= -140V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -7A; VCE= -5V
MIN TYP. MAX UNIT
-140
V
-2.5
V
-3.0
V
-100 μA
-100 μA
-100 μA
2000
5000
30000
hFE-2 Classifications
Q
P
5000-15000 8000-30000
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)