2SB1289

isc Silicon PNP Power Transistor 2SB1289 DESCRIPTION ·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1580 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1289 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(sat) Base-Emitter Saturation Voltage IC= -4A; IB= -0.4A ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -5V COB Output Capacitance IE=0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth Product IE= 0.5A; VCE...