2SB1315

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1977 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-55W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -12 A 3.5 W 65 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1315 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1315 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -120V ; IE=0 -50 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -50 μA hFE-1 DC Current Gain IC= -50mA; VCE= -5V 45 hFE-2 DC Current Gain IC= -1A; VCE= -5V 60 320 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 200 pF  hFE-2 Classifications M L K...