2SB1317

isc Silicon PNP Power Transistor 2SB1317 DESCRIPTION ·Good Linearity of hFE ·Wide Area of Safe Operation ·High DC Current-Gain Bandwidth Product ·Complement to Type 2SD1975 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplification ·Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -25 A 3.5 W 150 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1317 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -2.5 V VBE(on) Base-Emitter On Voltage IC= -8A ; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -180V ; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -20mA ; VCE= -5V 20 hFE-2 DC Current Gain IC= -1A ; VCE= -5V 60 200 hFE-3 DC Current Gain IC= -8A ; VCE= -5V 20 COB Output Capacitance IE= 0;VCB= -10V; ftest= 1.0MHz 450 pF fT Current-Gain—Bandw...