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2SB1367

PNP Transistor

Description

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A) ·Complement to Type 2SD2059 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION...

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