2SC1584

isc Silicon NPN PowerTransistor DESCRIPTION ·High Power Dissipation- : PC= 150W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Complement to Type 2SA907 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SC1584 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN PowerTransistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A ICBO Collector Cutoff Current VCB= 150V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 5A; VCE= 4V fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= 12V 2SC1584 MIN TYP. MAX UNIT 100 V 3.0 V 1.0 mA 1.0 mA 30 10 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the app...