2SC3180N

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max.) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1263N ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.6 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3180N isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3180N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 5V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 3A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 80 V 2.0 V 1.5 V 5 μA 5 μA 55 1...