2SC4552

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V, IC= 3A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 8A, IB= 0.4A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 100 V 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse 30 A IB Base Current-Continuous 7.5 A Total Power Dissipation @TC=25℃ 30 PT W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SC4552 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4552 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA, Ib=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 0.6A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8A; IB= 0.4A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 12A; IB= 0.6A ICBO Collector Cutoff Current VCB= 60V; IE= 0 ICEO Collector Cutoff Current VCE= 60V; Ib=0 IEBO Emitter Cutoff Curr...