2SC5271

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2.5A, IB= 0.5A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for resonant switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current-Continuous 5.0 A ICM Collector Current-Pulse 10 A IB Base Current-Continuous 2.0 A PT Total Power Dissipation @TC=25℃ 30 W TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~150 ℃ 2SC5271 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 300V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 2.5A ; VCE= 2V hFE-2 DC Current Gain IC= 1mA ; VCE= 2V 2SC5271 MIN TYP. MAX UNIT 200 V 1.0 V 1.5 V 100 μA 100 μA 10 30 15 NOTICE： ISC reserves the rights to make changes of the content herein the da...