2SC5287

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 550V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 550 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5287 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.8A; IB= 0.36A VBE(sat) Base-Emitter Saturation Voltage IC= 1.8A; IB= 0.36A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 1.8A ; VCE= 4V fT Current-Gain—Bandwidth Product IE= -0.35A ; VCE= 12V COB Output Capacitance VCB= 10V; ftest= 1.0MHz 2SC5287 MIN TYP. MAX UNIT 550 V 0.5 V 1.2 V 0.1 mA 0.1 mA 10 25 6 MHz 50 pF NOTICE： ISC reserves the rig...