2SD716

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V (Max)@IC= 4A ·Complement to Type 2SB686 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommended for 30~35W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IE Emitter Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD716 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 5V ICBO Collector Cutoff Current VCB= 100V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V  hFE Classifications R O 55-110 80-160 2SD716 MIN TYP. MAX UNIT 100 V 5 V 2.0 V 1.5 V 10 μA 10 μA 55 16...