2SD717

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V (Max)@IC= 6.0A ·High Collector Power Dissipation : PC= 80W @TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD717 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current VCB= 70V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE -1 DC Current Gain IC= 1A ; VCE= 1V hFE -2 DC Current Gain IC= 6A ; VCE= 1V  hFE-1 Classifications O Y 70-140 120-240 2SD717 MIN TYP. MAX UNIT 50 V 0.4 V 1.2 V 10 μA 10 μA 70 240 30 NO...