2SD844

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V (Max)@IC= 4A ·High Collector Power Dissipation : PC= 60W @TC=25℃ ·Complement to Type 2SB754 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IE Emitter Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7 A 2.5 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD844 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 1V ICBO Collector Cutoff Current VCB= 50V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE -1 DC Current Gain IC= 1A ; VCE= 1V hFE -2 DC Current Gain IC= 4A ; VCE= 1V  hFE-1 Classifications O Y ...