BC369

isc Silicon PNP Transistor BC369 FEATURES ·High Current Low Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation Rth j-a Thermal Resistance,Junction to Ambient TJ Junction Temperature Tstg Storage Temperature Range VALUE -25 -20 -5 UNIT V V V -1 A 625 mW 200 ℃/W 150 ℃ -55~150 ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage V(BR)CEO V(BR)CBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage VCE(sat) Collector-Emitter Saturation Voltage IE= -10μA; IC= 0 IC= -10mA; IB= 0 IC=-0.1mA; IE= 0 IC= -1A ; IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -1V IEBO Emitter Cutoff Current VEB= -5V; IC= 0 ICBO Collector Cutoff Current VCB= -25V; IE= 0 hFE-1 DC Current Gain IC= -0.5A ; VCE= -1V hFE-2 DC Current Gain IC= -5mA ; VCE= -10V hFE-3 DC Current Gain IC= -1A ; VCE= -1V BC369 MIN TYP. MAX UNIT -5 V -20 V -25 V -0.5 V -1.0 V 10 μA 10 μA 85 375 50 60 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The infor...