BC847

isc Silicon NPN Plastic-Encapsulate Transistors BC847 DESCRIPTION ·DC Current Gain- : hFE=110-800 @IC= 2mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ideally suited for automatic insertion. ·For switching and AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature VALUE 50 45 6 0.1 0.2 150 -65~150 UNIT V V V A W ℃ ℃ isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Plastic-Encapsulate Transistors ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 100mA; IB= 5mA ICBO Collector Cutoff Current VCB= 50V; IE= 0 ICEO Collector Cutoff Current VCE= 45V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 2mA; VCE= 5V  hFE Classifications BC847A BC847B BC847C 110-220 200-450 420-800 BC847 MIN MAX UNIT 45 V 50 V 6 V 0.5 ...