BD745B

isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current -IC= 20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD745; 60V(Min)- BD745A 80V(Min)- BD745B; 100V(Min)- BD745C ·Complement to Type BD746/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD745 50 VCER Collector-Emitter Voltage (RBE= 100Ω) BD745A BD745B 70 90 BD745C 110 BD745 45 VCEO Collector-Emitter Voltage BD745A 60 BD745B 80 BD745C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 20 ICM Collector Current-Peak 25 IB Base Current 7 Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ 3.5 115 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ BD745/A/B/C isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD745/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD745 45 V(BR)CEO Collector-Emitter Breakdown Voltage BD745A BD745B IC= 30mA ;IB=0 60 80 V BD745C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 5A 3.0 V VBE(on)-1 Base-Emitter On Voltage IC= 5A; VCE= 4V ...