isc Silicon NPN Power Transistor
DESCRIPTION ·Collector Current -IC= 20A ·Collector-Emitter Breakdown Voltage-
: V(BR)C...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector Current -IC= 20A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 45V(Min)- BD745; 60V(Min)- BD745A 80V(Min)- BD745B; 100V(Min)- BD745C
·Complement to Type BD746/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BD745
50
VCER
Collector-Emitter Voltage (RBE= 100Ω)
BD745A BD745B
70 90
BD745C
110
BD745
45
VCEO
Collector-Emitter Voltage
BD745A
60
BD745B
80
BD745C
100
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
20
ICM
Collector Current-Peak
25
IB
Base Current
7
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipation
@ TC=25℃
3.5 115
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A A W ℃ ℃
BD745/A/B/C
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
BD745/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD745
45
V(BR)CEO
Collector-Emitter Breakdown Voltage
BD745A BD745B
IC= 30mA ;IB=0
60 80
V
BD745C
100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
1.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 5A
3.0
V
VBE(on)-1 Base-Emitter On Voltage
IC= 5A; VCE= 4V
...