PNP Transistor. BD746 Datasheet

BD746 Transistor. Datasheet pdf. Equivalent

Part BD746
Description PNP Transistor
Feature isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -20A ·Collector-Emitter Breakd.
Manufacture INCHANGE
Datasheet
Download BD746 Datasheet

BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS BD746 Datasheet
SavantIC Semiconductor Product Specification Silicon PNP P BD746 Datasheet
isc Silicon PNP Power Transistor DESCRIPTION ·Collector Cur BD746 Datasheet
BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS BD746A Datasheet
SavantIC Semiconductor Product Specification Silicon PNP P BD746A Datasheet
isc Silicon PNP Power Transistor DESCRIPTION ·Collector Cur BD746A Datasheet
BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS BD746B Datasheet
SavantIC Semiconductor Product Specification Silicon PNP P BD746B Datasheet
isc Silicon PNP Power Transistor DESCRIPTION ·Collector Cur BD746B Datasheet
BD746, BD746A, BD746B, BD746C PNP SILICON POWER TRANSISTORS BD746C Datasheet
Recommendation Recommendation Datasheet BD746 Datasheet





BD746
isc Silicon PNP Power Transistor
DESCRIPTION
·Collector Current -IC= -20A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- BD746; -60V(Min)- BD746A
-80V(Min)- BD746B; -100V(Min)- BD746C
·Complement to Type BD745/A/B/C
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BD746
-50
VCER
Collector-Emitter
Voltage (RBE= 100Ω)
BD746A
BD746B
-70
-90
V
BD746C -110
BD746
-45
VCEO
Collector-Emitter
Voltage
BD746A
-60
V
BD746B
-80
BD746C -100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-20
A
ICM
Collector Current-Peak
-25
A
IB
Base Current
Collector Power Dissipation
PC
@ Ta=25
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-7
A
3.5
W
115
150
Tstg
Storage Temperature Range
-65~150
BD746/A/B/C
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BD746
isc Silicon PNP Power Transistor
BD746/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD746
-45
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD746A
BD746B
IC= -30mA ;IB=0
-60
-80
V
BD746C
-100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
-1.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -20A; IB= -5A
-3.0
V
VBE(on)-1 Base-Emitter On Voltage
IC= -5A; VCE= -4V
-1.0
V
VBE(on)-2
ICES
ICEO
Base-Emitter On Voltage
BD746
Collector
Cutoff Current
BD746A
BD746B
BD746C
Collector
Cutoff Current
BD746/A
BD746B/C
IC= -20A; VCE= -4V
VCE= -50V; VBE= 0
VCE= -50V; VBE= 0; TC= 125
VCE= -70V; VBE= 0
VCE= -70V; VBE= 0; TC= 125
VCE= -90V; VBE= 0
VCE= -90V; VBE= 0; TC= 125
VCE= -110V; VBE= 0
VCE= -110V; VBE= 0; TC= 125
VCE= -30V; IB= 0
VCE= -60V; IB= 0
-3.0
V
-0.1
-5.0
-0.1
-5.0
-0.1
mA
-5.0
-0.1
-5.0
-0.1 mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-0.5 mA
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
40
hFE-2
DC Current Gain
IC= -5A; VCE= -4V
20
150
hFE-3
DC Current Gain
IC= -20A; VCE= -4V
5
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
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