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BD746C Dataheets PDF



Part Number BD746C
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet BD746C DatasheetBD746C Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD746; -60V(Min)- BD746A -80V(Min)- BD746B; -100V(Min)- BD746C ·Complement to Type BD745/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD746 -50 VCER Colle.

  BD746C   BD746C



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isc Silicon PNP Power Transistor DESCRIPTION ·Collector Current -IC= -20A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD746; -60V(Min)- BD746A -80V(Min)- BD746B; -100V(Min)- BD746C ·Complement to Type BD745/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD746 -50 VCER Collector-Emitter Voltage (RBE= 100Ω) BD746A BD746B -70 -90 V BD746C -110 BD746 -45 VCEO Collector-Emitter Voltage BD746A -60 V BD746B -80 BD746C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -20 A ICM Collector Current-Peak -25 A IB Base Current Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -7 A 3.5 W 115 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BD746/A/B/C isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD746/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD746 -45 V(BR)CEO Collector-Emitter Breakdown Voltage BD746A BD746B IC= -30mA ;IB=0 -60 -80 V BD746C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -20A; IB= -5A -3.0 V VBE(on)-1 Base-Emitter On Voltage IC= -5A; VCE= -4V -1.0 V VBE(on)-2 ICES ICEO Base-Emitter On Voltage BD746 Collector Cutoff Current BD746A BD746B BD746C Collector Cutoff Current BD746/A BD746B/C IC= -20A; VCE= -4V VCE= -50V; VBE= 0 VCE= -50V; VBE= 0; TC= 125℃ VCE= -70V; VBE= 0 VCE= -70V; VBE= 0; TC= 125℃ VCE= -90V; VBE= 0 VCE= -90V; VBE= 0; TC= 125℃ VCE= -110V; VBE= 0 VCE= -110V; VBE= 0; TC= 125℃ VCE= -30V; IB= 0 VCE= -60V; IB= 0 -3.0 V -0.1 -5.0 -0.1 -5.0 -0.1 mA -5.0 -0.1 -5.0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -0.5 mA hFE-1 DC Current Gain IC= -1A; VCE= -4V 40 hFE-2 DC Current Gain IC= -5A; VCE= -4V 20 150 hFE-3 DC Current Gain IC= -20A; VCE= -4V 5 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark .


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