BD751C

isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C ·High Power Dissipation ·Complement to Type BD750B/750C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD751B 110 VCEV Collector-Emitter Voltage V BD751C 140 BD751B 100 VCEO(SUS) Collector-Emitter Voltage V BD751C 130 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A IB Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 250 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W BD751B/751C isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD751B BD751C IC=50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage BD751B IC= 7.5A; IB= 0.75A BD751C IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage BD751B IC= 7.5A; IB= 0.75A BD751C IC= 5A; IB= 0.5A ICEV Collector Cutoff Current BD751B VCEV= 110V;VBE(off)= 1.5V BD751C VCEV= 140V;VBE(off)= 1.5V IEBO Emitter Cutoff Cur...