BUV25

isc Silicon NPN Power Transistor BUV25 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.)@IC= 4A ·High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power switching applications in military and industrial equipments. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 500 V 500 V 7 V 15 A 20 A 3 A 250 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ;Ib=0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 1.6A ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emi...