BUX98A

isc Silicon NPN Power Transistor BUX98A DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency and efficiency converters ·Linear and switching industrial equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-peak ( tp <5 ms ) 60 A IB Base Current-Continuous 8 A IBM Base Current-peak ( tp <5 ms ) PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 30 A 250 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUX98A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ☆VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCER(SUS) Collector-Emitter Sustaining Voltage IC= 1mA ☆VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 16A ;IB= 3.2A ☆VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 24A ;IB= 5A ☆VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current ICEO Collector Cutoff Current IC= 16A ;IB= 3.2A VCB=1000V; IE= 0 VCB=...