KTC3229

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A IB Base Current-Continuous PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 20 mA 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTC3229 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA ICBO Collector Cutoff Current VCB= 240V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5mA; VCE= 10V hFE-2 DC Current Gain IC= 20mA; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA; VCE= 20V COB Output Capacitance IE= 0; VCB= 20V, ftest= 1MHz KTC3229 MIN TYP. MAX UNIT 1.0 V 1.0 μA 1.0 μA 20 30 200 75 MHz 4.0 pF NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presen...