MJ12005

isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 750V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous 4 A IE Emitter Current-Continuous 12 A PC Collector Power Dissipation@TC=25℃ 100 W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W MJ12005 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=10mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 1500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 MJ12005 MIN TYP. MAX UNIT 750 V 5.0 V 1.5 V 0.5 mA 0.1 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for th...